A study of the bonding-wire reliability on the chip surface electrode in IGBT

Yoshinari Ikeda, Hiroaki Hokazono, Shigeru Sakai, Tomohiro Nishimura, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good performance comes from the barrier property of the Ni plating layer.

Original languageEnglish
Title of host publication2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Pages289-292
Number of pages4
Publication statusPublished - 2010
Event2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010 - Hiroshima, Japan
Duration: 2010 Jun 62010 Jun 10

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
CountryJapan
CityHiroshima
Period10/6/610/6/10

ASJC Scopus subject areas

  • Engineering(all)

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