Abstract
This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.
Original language | English |
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Pages (from-to) | 340-345 |
Number of pages | 6 |
Journal | Proceedings of The International Symposium on Multiple-Valued Logic |
Publication status | Published - 2004 Jul 26 |
Event | Proceedings - 34th International Symposium on Multiple-Values Logic, ISMVL 2004 - Toronto, Ont, Canada Duration: 2004 May 19 → 2004 May 22 |
ASJC Scopus subject areas
- Hardware and Architecture
- Logic
- Safety, Risk, Reliability and Quality
- Chemical Health and Safety