A study of multiple-valued magnetoresistive RAM (MRAM) using binary MTJ devices

Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami, Takahiro Hanyu

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.

Original languageEnglish
Pages (from-to)340-345
Number of pages6
JournalProceedings of The International Symposium on Multiple-Valued Logic
Publication statusPublished - 2004 Jul 26
EventProceedings - 34th International Symposium on Multiple-Values Logic, ISMVL 2004 - Toronto, Ont, Canada
Duration: 2004 May 192004 May 22

ASJC Scopus subject areas

  • Hardware and Architecture
  • Logic
  • Safety, Risk, Reliability and Quality
  • Chemical Health and Safety

Fingerprint Dive into the research topics of 'A study of multiple-valued magnetoresistive RAM (MRAM) using binary MTJ devices'. Together they form a unique fingerprint.

Cite this