A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy

T. Ishida; Kazushige Maeda; S. Takeuchi

doi:10.1007/BF00886176

A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy

T. Ishida, Kazushige Maeda, S. Takeuchi

SCI - Physics

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E_c -0.65eV and E_c -0.74eV) and one grown-in hole trap level (E_v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E_c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.

Original language	English
Pages (from-to)	257-261
Number of pages	5
Journal	Applied Physics
Volume	21
Issue number	3
DOIs	https://doi.org/10.1007/BF00886176
Publication status	Published - 1980 Mar 1

Keywords

61.70
71.55

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1007/BF00886176

Fingerprint Dive into the research topics of 'A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy'. Together they form a unique fingerprint.

Cite this

@article{3432d126b734411bbefe0e6ff24abdad,

title = "A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy",

abstract = "Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c -0.65eV and E c -0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.",

keywords = "61.70, 71.55",

author = "T. Ishida and Kazushige Maeda and S. Takeuchi",

year = "1980",

month = mar,

day = "1",

doi = "10.1007/BF00886176",

language = "English",

volume = "21",

pages = "257--261",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Verlag",

number = "3",

}

TY - JOUR

T1 - A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy

AU - Ishida, T.

AU - Maeda, Kazushige

AU - Takeuchi, S.

PY - 1980/3/1

Y1 - 1980/3/1

N2 - Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c -0.65eV and E c -0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.

AB - Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c -0.65eV and E c -0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.

KW - 61.70

KW - 71.55

UR - http://www.scopus.com/inward/record.url?scp=0018998879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018998879&partnerID=8YFLogxK

U2 - 10.1007/BF00886176

DO - 10.1007/BF00886176

M3 - Article

AN - SCOPUS:0018998879

VL - 21

SP - 257

EP - 261

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 3

ER -

A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this