A study of deformation-produced deep levels in n-GaAs using deep level transient capacitance spectroscopy

T. Ishida, Kazushige Maeda, S. Takeuchi

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c -0.65eV and E c -0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalApplied Physics
Volume21
Issue number3
DOIs
Publication statusPublished - 1980 Mar 1

Keywords

  • 61.70
  • 71.55

ASJC Scopus subject areas

  • Engineering(all)

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