Abstract
Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undoped n-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c -0.65eV and E c -0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c -∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
| Original language | English |
|---|---|
| Pages (from-to) | 257-261 |
| Number of pages | 5 |
| Journal | Applied Physics |
| Volume | 21 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1980 Mar 1 |
Keywords
- 61.70
- 71.55
ASJC Scopus subject areas
- Engineering(all)