A study of blister formation in ALD Al2O3 grown on silicon

Bart Vermang, Hans Goverde, Veerle Simons, Ingrid De Wolf, Johan Meersschaut, Shuji Tanaka, Joachim John, Jef Poortmans, Robert Mertens

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


This work investigates the formation of blisters during annealing an Al2O3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al2O3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H2 and H 2O and (ii) Al2O3 being a diffusion barrier. Picture Presented. Schematics of the loading configuration of a pressurized blister, taken from [1].

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Number of pages4
Publication statusPublished - 2012 Nov 26
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 2012 Jun 32012 Jun 8

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX


  • aluminum oxide
  • atomic layer deposition
  • blistering
  • external load
  • residual stress
  • silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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