A strained organic field-effect transistor with a gate-tunable superconducting channel

Hiroshi M. Yamamoto, Masaki Nakano, Masayuki Suda, Yoshihiro Iwasa, Masashi Kawasaki, Reizo Kato

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.

Original languageEnglish
Article number2379
JournalNature communications
Volume4
DOIs
Publication statusPublished - 2013 Sep 5

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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