TY - JOUR
T1 - A strained organic field-effect transistor with a gate-tunable superconducting channel
AU - Yamamoto, Hiroshi M.
AU - Nakano, Masaki
AU - Suda, Masayuki
AU - Iwasa, Yoshihiro
AU - Kawasaki, Masashi
AU - Kato, Reizo
PY - 2013/9/5
Y1 - 2013/9/5
N2 - In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.
AB - In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.
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U2 - 10.1038/ncomms3379
DO - 10.1038/ncomms3379
M3 - Article
C2 - 23974634
AN - SCOPUS:84883289992
VL - 4
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 2379
ER -