A Statistical evaluation of random telegraph noise of in-pixel source follower equivalent surface and buried channel transistors

Rihito Kuroda, Akihiro Yonezawa, Akinobu Teramoto, Tsung Ling Li, Yasuhisa Tochigi, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Using a large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors of a CMOS image sensor with buried and surface channel transistor structures were statistically evaluated under various current and body bias conditions. The distribution of noise intensities at various operational bias conditions, correlations between RTN amplitude and static characteristics were analyzed. It was found that the RTN amplitude has a positive correlation between the subthreshold swing for both types of transistors.

Original languageEnglish
Article number6605590
Pages (from-to)3555-3561
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number10
DOIs
Publication statusPublished - 2013 Sep 4

Keywords

  • CMOS image sensors
  • low-frequency noise
  • noise measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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