A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130 nm generation and beyond

Y. Kumura, T. Ozaki, H. Kanaya, O. Hidaka, Y. Shimojo, S. Shuto, Y. Yamada, K. Tomioka, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, A. Nitayama

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11 Citations (Scopus)

Abstract

A damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130 nm CMOS embedded non-volatile memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress oxygen and lead vacancies at a top electrode interface. Switching charge (Qsw) of 40 μC/cm2 is achieved for 0.45 × 0.45 μm2 top electrode (TE) size capacitor. Ninety percent saturation of Qsw is obtained at 1.1 V that is low enough to drive ferroelectric capacitors at 1.8 V for 130 nm CMOS. Opposite state polarization margin more than 90% is retained against imprint after the high temperature storage at 150 °C for 70 h. The combination of this high reliable capacitor with large Qsw and Chain FeRAM™ architecture with a small bit line capacitance [Ozaki T, Iba J, Yamada Y, Kanaya H, Morimoto T, Hidaka O, et al. In: Symposium on VLSI technologies technical digest; 2001. p. 113] drastically increases signal window for 1T1 C operation. A sharp signal distribution and a large peak-to-peak signal window of 730 mV at 1.8 V on the test device with 0.20 μm2 area capacitors using three-level Cu metallization on 32 Mb Chain FeRAM™ are obtained. This technology realizes reliable embedded FeRAM of 130 nm generation and beyond.

Original languageEnglish
Pages (from-to)606-612
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number4
DOIs
Publication statusPublished - 2006 Apr 1

Keywords

  • FeRAM
  • Ferroelectrics
  • Memory
  • PZT
  • SrRuO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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