TY - GEN
T1 - A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond
AU - Kumura, Y.
AU - Ozaki, T.
AU - Kanaya, H.
AU - Hidaka, O.
AU - Shimojo, Y.
AU - Shuto, S.
AU - Yamada, Y.
AU - Tomioka, K.
AU - Yamakawa, K.
AU - Yamazaki, S.
AU - Takashima, D.
AU - Miyakawa, T.
AU - Shiratake, S.
AU - Ohtsuki, S.
AU - Kunishima, I.
AU - Nitayama, A.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.
AB - An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.
UR - http://www.scopus.com/inward/record.url?scp=33751423815&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33751423815&partnerID=8YFLogxK
U2 - 10.1109/ESSDER.2005.1546709
DO - 10.1109/ESSDER.2005.1546709
M3 - Conference contribution
AN - SCOPUS:33751423815
SN - 0780392035
SN - 9780780392038
T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
SP - 557
EP - 560
BT - Proceedings of ESSDERC 2005
T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference
Y2 - 12 September 2005 through 16 September 2005
ER -