A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond

Y. Kumura, T. Ozaki, H. Kanaya, O. Hidaka, Y. Shimojo, S. Shuto, Y. Yamada, K. Tomioka, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, A. Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages557-560
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

ASJC Scopus subject areas

  • Engineering(all)

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