A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond

Y. Kumura; T. Ozaki; H. Kanaya; O. Hidaka; Y. Shimojo; S. Shuto; Y. Yamada; K. Tomioka; K. Yamakawa; S. Yamazaki; D. Takashima; T. Miyakawa; S. Shiratake; S. Ohtsuki; I. Kunishima; A. Nitayama

doi:10.1109/ESSDER.2005.1546709

A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond

Y. Kumura, T. Ozaki, H. Kanaya, O. Hidaka, Y. Shimojo, S. Shuto, Y. Yamada, K. Tomioka, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, A. Nitayama

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An extremely damage-robust SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO₃/IrO₂ top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm² is achieved for 0.45×0.45um² top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	557-560
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546709
Publication status	Published - 2005 Dec 1
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 2005 Sep 12 → 2005 Sep 16

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country	France
City	Grenoble
Period	05/9/12 → 05/9/16

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ESSDER.2005.1546709

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Kumura, Y., Ozaki, T., Kanaya, H., Hidaka, O., Shimojo, Y., Shuto, S., Yamada, Y., Tomioka, K., Yamakawa, K., Yamazaki, S., Takashima, D., Miyakawa, T., Shiratake, S., Ohtsuki, S., Kunishima, I., & Nitayama, A. (2005). A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 557-560). [1546709] (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546709

A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond. / Kumura, Y.; Ozaki, T.; Kanaya, H.; Hidaka, O.; Shimojo, Y.; Shuto, S.; Yamada, Y.; Tomioka, K.; Yamakawa, K.; Yamazaki, S.; Takashima, D.; Miyakawa, T.; Shiratake, S.; Ohtsuki, S.; Kunishima, I.; Nitayama, A.

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 557-560 1546709 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumura, Y, Ozaki, T, Kanaya, H, Hidaka, O, Shimojo, Y, Shuto, S, Yamada, Y, Tomioka, K, Yamakawa, K, Yamazaki, S, Takashima, D, Miyakawa, T, Shiratake, S, Ohtsuki, S, Kunishima, I & Nitayama, A 2005, A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546709, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 557-560, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 05/9/12. https://doi.org/10.1109/ESSDER.2005.1546709

Kumura Y, Ozaki T, Kanaya H, Hidaka O, Shimojo Y, Shuto S et al. A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 557-560. 1546709. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDER.2005.1546709

Kumura, Y. ; Ozaki, T. ; Kanaya, H. ; Hidaka, O. ; Shimojo, Y. ; Shuto, S. ; Yamada, Y. ; Tomioka, K. ; Yamakawa, K. ; Yamazaki, S. ; Takashima, D. ; Miyakawa, T. ; Shiratake, S. ; Ohtsuki, S. ; Kunishima, I. ; Nitayama, A. / A SrRuO₃/IrO₂ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. pp. 557-560 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference).

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title = "A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and Beyond",

abstract = "An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.",

author = "Y. Kumura and T. Ozaki and H. Kanaya and O. Hidaka and Y. Shimojo and S. Shuto and Y. Yamada and K. Tomioka and K. Yamakawa and S. Yamazaki and D. Takashima and T. Miyakawa and S. Shiratake and S. Ohtsuki and I. Kunishima and A. Nitayama",

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AU - Shimojo, Y.

AU - Shuto, S.

AU - Yamada, Y.

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AU - Yamakawa, K.

AU - Yamazaki, S.

AU - Takashima, D.

AU - Miyakawa, T.

AU - Shiratake, S.

AU - Ohtsuki, S.

AU - Kunishima, I.

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N2 - An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.

AB - An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure [1] increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.

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