An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45um2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of 'chain' structure  increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.