A spread stacked capacitor (SSC) cell for 64Mbit DRAMs

S. Inoue, K. Hieda, A. Nitayama, F. Horiguchi, F. Masuoka

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

In order to realize a small memory cell area for 64-Mb DRAMs (dynamic RAMs), a spread stacked capacitor (SSC) cell is proposed. In this cell, the storage electrode of the first memory cell is expanded to the neighboring second memory cell area. Then, the storage electrode of the second memory cell is also expanded to the first memory cell area. Therefore, each storage electrode can occupy two memory cell areas, and the SSC cell can enlarge the storage capacitance to 1.8 times that of the conventional stacked capacitor cell. When the SSC cell is applied to 64-Mb DRAMs, a 27-fF storage capacitance can be achieved using a 4-nm-SiO2-equivalent-thickness dielectric film.

Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1989 Dec 1
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 1989 Dec 31989 Dec 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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