Abstract
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with ±6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga, Mn)As.
Original language | English |
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Pages (from-to) | L1274-L1276 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 12 A |
DOIs | |
Publication status | Published - 2001 Dec 1 |
Keywords
- (Ga, Mn)As
- Esaki diode
- Ferromagnetic semiconductor
- Light emitting diode
- Spin injection
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)