A spin Esaki diode

Makoto Kohda, Yuzo Ohno, Koji Takamura, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

131 Citations (Scopus)


We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with ±6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga, Mn)As.

Original languageEnglish
Pages (from-to)L1274-L1276
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 A
Publication statusPublished - 2001 Dec 1


  • (Ga, Mn)As
  • Esaki diode
  • Ferromagnetic semiconductor
  • Light emitting diode
  • Spin injection

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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