We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio > 105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.
ASJC Scopus subject areas
- Physics and Astronomy(all)