A single crystalline strontium titanate thin film transistor

Kosuke Uchida, Akira Yoshikawa, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio > 105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

    Original languageEnglish
    Article number096103
    JournalJournal of Applied Physics
    Issue number9
    Publication statusPublished - 2010 May 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


    Dive into the research topics of 'A single crystalline strontium titanate thin film transistor'. Together they form a unique fingerprint.

    Cite this