A single crystalline strontium titanate thin film transistor

Kosuke Uchida; Akira Yoshikawa; Kunihito Koumoto; Takeharu Kato; Yuichi Ikuhara; Hiromichi Ohta

doi:10.1063/1.3407568

A single crystalline strontium titanate thin film transistor

Kosuke Uchida, Akira Yoshikawa, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO₃) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO₃ films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO₃ TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO₃ field-effect transistor: an on/off current ratio > 10⁵, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm² V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO₃ films.

Original language	English
Article number	096103
Journal	Journal of Applied Physics
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.3407568
Publication status	Published - 2010 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "A single crystalline strontium titanate thin film transistor",

abstract = "We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio > 105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.",

author = "Kosuke Uchida and Akira Yoshikawa and Kunihito Koumoto and Takeharu Kato and Yuichi Ikuhara and Hiromichi Ohta",

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T1 - A single crystalline strontium titanate thin film transistor

AU - Uchida, Kosuke

AU - Yoshikawa, Akira

AU - Koumoto, Kunihito

AU - Kato, Takeharu

AU - Ikuhara, Yuichi

AU - Ohta, Hiromichi

N1 - Funding Information: A part of this work was financially supported by MEXT (Nano Materials Science for Atomic-scale Modification, under Grant No. 20047007).

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio > 105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

AB - We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio > 105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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A single crystalline strontium titanate thin film transistor

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