A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells

Atsushi A. Yamaguchi, Kazunobu Kojima

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

By using a simple theoretical approach, the previously reported experimental results of the polarization properties in semipolar and nonpolar InGaN quantum wells (QWs) were analyzed. On the basis of the k.p -perturbation theory, we derived a useful analytical expression for describing the polarization properties of these QWs, and used this expression to analyze experimental data reported from various research groups. Based on these analyses, we predicted that the negative polarization degree, which is favorable for laser diodes with cleaved-facet cavity mirrors, would appear in the blue- or green-InGaN QWs on the lower-angle semipolar planes (30°-40° inclined from the c -plane).

Original languageEnglish
Article number101905
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
Publication statusPublished - 2011 Mar 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells'. Together they form a unique fingerprint.

Cite this