The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.
- Anodic oxidation
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering