A SiGe HBT IC chipset for 40-Gb/s optical transmission systems

T. Masuda, N. Shiramizu, E. Ohue, K. Oda, R. Hayami, M. Kondo, T. Onai, K. Washio, K. Ohhata, F. Arakawa, M. Tanabe, H. Shemamoto, T. Harada

Research output: Contribution to journalArticlepeer-review


Using a 0.2-μm self-aligned epitaxial-growth silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology, we have developed a chipset for 40-Gb/s time-division multiplexing optical transmission systems. In this paper, we describe seven analog and digital ICs: a 45-GHz bandwidth transimpedance amplifier, a 48.7-GHz bandwidth automatic-gain-controllable amplifier, a 40-Gb/s decision circuit, a 40-Gb/s full-wave rectifier, a 40-Gb/s limiting amplifier with a 32-dB gain, a 45-Gb/s 1:4 demultiplexer, and a 45-Gb/ s 4:1 multiplexer. To increase bandwidth of the transimpedance amplifier, a common-base input stage is introduced. In order to have high gain and wide bandwidth simultaneously, active load circuits composed of a differential transimpedance amplifier are used for the AGC amplifier, the limiting amplifier, and the decision circuit. Full-rate clocking is employed to reduce the influence caused by clock-duty variation in digital circuits such as the decision circuit, the demultiplexer, and the multiplexer. All ICs were characterized by using on-wafer probes, and some of them were built in brass-packages for bit-error rate measurement.

Original languageEnglish
Pages (from-to)239-263
Number of pages25
JournalInternational Journal of High Speed Electronics and Systems
Issue number1
Publication statusPublished - 2003 Mar
Externally publishedYes


  • Automatic-gain-controllable amplifier
  • Decision circuit
  • Demultiplexer
  • Full-wave rectifier
  • Limiting amplifier
  • Multiplexer
  • SiGe HBT
  • Transimpedance amplifier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering


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