A-SiC:H/SiO2 Laminated Polarization Splitter for the Wavelength Region Longer Than 1.3 μm Prepared by Plasma-Enhanced Chemical Vapor Deposition

Osamu Hanaizumi, Yong Gi Lee, Isao Takahashi, Tomohiko Nakajo, Jun Ichi Murota, Shojiro Kawakami

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A laminated polarization splitter for the wavelength region longer than 1.3 μm is fabricated for the first time. It is composed of a-SiC:H/SiO2 alternative multilayers prepared by plasma-enhanced chemical vapor deposition. Splitting behavior is also verified experimentally. It has low absorption loss even for the wavelength region around λ = 1.3 μm because the band-gap energy of a-Sic is larger than that of a-Si. The measured splitting angle is 13.8°, which is 2.4 times larger than the 5.7° splitting angle of rutile. The absorption loss of the multilayer is reduced to 1 × 10-3 dB/μm at λ = 1.3 μm. The magnitude of the residual stress is 9.45 × 108 dyn/cm2, which is about one-third of that prepared by the rf bias sputtering equipment which is used for another project of our group. The deposition rate of SiO2, is increased to 135 nm/min, which is 27 times larger than that prepared by the sputtering equipment.

Original languageEnglish
Pages (from-to)359-362
Number of pages4
JournalOptical Fiber Technology
Volume1
Issue number4
DOIs
Publication statusPublished - 1995 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A-SiC:H/SiO<sub>2</sub> Laminated Polarization Splitter for the Wavelength Region Longer Than 1.3 μm Prepared by Plasma-Enhanced Chemical Vapor Deposition'. Together they form a unique fingerprint.

Cite this