A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

Nana Akahane, Shigetoshi Sugawa, Satoru Adachi, Kazuya Mori, Toshiyuki Ishiuchi, Koichi Mizobuchi

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)

Abstract

In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch VGA format (640 H × 480 V pixels), 7.5 × 7.5 μm 2 pixel color CMOS image sensor fabricated through 0.35-μm two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.

Original languageEnglish
Pages (from-to)851-858
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume41
Issue number4
DOIs
Publication statusPublished - 2006 Apr 1

Keywords

  • CMOS image sensor
  • Dynamic range
  • Linearity
  • Sensitivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor'. Together they form a unique fingerprint.

Cite this