A sensitivity and linearity improvement of a 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

Nana Akahane, Shigetoshi Sugawa, Satoru Adachi, Kazuya Mori, Toshiyuki Ishiuchi, Koichi Mizobuchi

Research output: Contribution to conferencePaperpeer-review

19 Citations (Scopus)

Abstract

In a CMOS image sensor featuring a lateral overflow capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in non-saturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. A 1/3" VGA color CMOS image sensor has fabricated through 0.35 μm 2P3M CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.

Original languageEnglish
Pages62-65
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2005 Jun 162005 Jun 18

Other

Other2005 Symposium on VLSI Circuits
Country/TerritoryJapan
CityKyoto
Period05/6/1605/6/18

Keywords

  • Cmos image sensor
  • Dynamic range
  • Lateral overflow
  • Sensitivity and linearity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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