A semi-analytical approach to compute the decay of optically generated carriers in silicon wafer

Michel Morin, Mitsu Koyanagi, Masataka Hirose

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A diffusion model is applied to the recombination dynamics of photogenerated carriers created by laser beam incident to a silicon slab. This analysis yields excess carrier density as an analytical function of time and depth, allowing a fast modeling of excess carrier decay with multi-parameter tuning capability such as excess carrier diffusion coefficient, wafer thickness, surface recombination velocity, bulk lifetime, excitation light absorption coefficient and pulse duration of the excitation laser beam.

Original languageEnglish
Pages (from-to)L816-L819
JournalJapanese journal of applied physics
Volume32
Issue number6 A
DOIs
Publication statusPublished - 1993 Jun
Externally publishedYes

Keywords

  • Carrier decay
  • Minority carrier lifetime
  • Model calculation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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