Abstract
An ultra-high-speed selective-epitaxial-growth SiGe-base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/in-situ doped poly-Si (IDP) (referred to as SMI) electrodes is developed. A 0.5-μm-wide SiGe base self-aligned to the 0.1-μm-wide emitter was selectively grown by using a UHV/CVD system. This self-aligned structure effectively reduces collector capacitance. In SMI technology, a tungsten film is selectively stacked on all poly-Si electrodes (base, emitter, and collector) in a self-aligned manner by using selective deposition without any heat treatment. So this technology does not cause unwanted diffusion of the base dopants and keeps a shallow intrinsic base profile. SMI technology can therefore provide low parasitic resistances and is well-suited to an SiGe-base HBT. A 2-μm-wide BPSG/SiO2 refilled trench was introduced in order to reduce the substrate capacitance. The low dielectric constant of BPSG/SiO2 and the wide trench are very effective in reducing the sidewall element of substrate capacitance. This technology makes it possible to obtain ultra-high-speed operation with a 9.3-ps-gate-delay emitter-coupled-logic (ECL) circuit.
Original language | English |
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Pages (from-to) | 1411-1416 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 46 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
Keywords
- Bipolar transistors
- Emitter coupled logic
- Epitaxial growth
- Heterojunctions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering