A scalable shield-bitline-overdrive technique for 1.3V chain FeRAM

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Sumiko Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A ferroelectric RAM, especially Chain FeRAM™ [1], can boost the performance of memory systems such as HDD and SSD. Chain FeRAM can be used as a non-volatile RAM cache in these memory systems, improving effective write bandwidth by minimizing the frequency of seeks to disk [2] and program/erase access to NAND flash memory [3]. A 128Mb Chain FeRAM with DDR2 interface has been previously developed [4]. However, the memory systems require further improvement to reach memory capacity of 256Mb while operating with a lower voltage of 1.3V to meet DDR3/LPDDR2 interface requirements and to accommodate device scaling. We demonstrate a ferroelectric capacitor overdrive technique with shield bitline drive. This technique applies a larger bias to the ferroelectric capacitor in a read operation, resulting in a larger readout cell signal in low-voltage operation.

Original languageEnglish
Title of host publication2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
Pages262-263
Number of pages2
DOIs
Publication statusPublished - 2010 May 18
Event2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, United States
Duration: 2010 Feb 72010 Feb 11

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume53
ISSN (Print)0193-6530

Conference

Conference2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
CountryUnited States
CitySan Francisco, CA
Period10/2/710/2/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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