A ring oscillator consisting of pentacene thin-film transistors with controlled threshold voltages

Hajime Takahashi, Masatoshi Kitamura, Yoshiaki Hattori, Yoshinari Kimura

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Pentacene thin-film transistors (TFTs) with controlled threshold voltages have been applied to a ring oscillator consisting of enhancement/depletion inverters for evaluation of the dynamic characteristics. The threshold voltage control was demonstrated by using oxygen plasma treatment to the SiO2 gate dielectric prepared by rf sputtering. The surface roughness of the SiO2 gate dielectric depended on the sputtering condition. The use of flat SiO2 gate dielectrics contributed to the improvement of the field-effect mobilities in pentacene TFTs. As a result, the ring oscillator operated at supply voltages of 15-25 V. The oscillation frequency was consistent with the result of circuit simulation for the ring oscillator.

Original languageEnglish
Article numberSBBJ04
JournalJapanese journal of applied physics
Volume58
Issue numberSB
DOIs
Publication statusPublished - 2019
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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