TY - GEN
T1 - A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films
AU - Endoh, T.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - A quantitative analysis of stress-induced leakage currents (SILCs) in ultra-thin silicon dioxide films is described, which enables the extraction of trap parameters, e.g. trap site location. Assuming a two-step trap-assisted inelastic tunneling mechanism, conduction of electrons through silicon dioxide films proceeds as follows: First, electrons tunnel from the cathode into neutral trap sites followed by an energy relaxation into the lowest available energy state of these trap sites. Finally, electrons reach the anode by a direct tunneling process. Modeling SILC characteristics of a stressed 6.8-nm-thick SiO2 film reveal a trap site location at 4.47 nm relative to the cathode interface. SILCs in the thickness range from 5.1 to 9.6-nm can be explained by the linear increase of the trap sheet charge density on oxide thickness, which suppresses local tunneling currents between cathode interface and trap sites by a reduction of the local oxide electric field.
AB - A quantitative analysis of stress-induced leakage currents (SILCs) in ultra-thin silicon dioxide films is described, which enables the extraction of trap parameters, e.g. trap site location. Assuming a two-step trap-assisted inelastic tunneling mechanism, conduction of electrons through silicon dioxide films proceeds as follows: First, electrons tunnel from the cathode into neutral trap sites followed by an energy relaxation into the lowest available energy state of these trap sites. Finally, electrons reach the anode by a direct tunneling process. Modeling SILC characteristics of a stressed 6.8-nm-thick SiO2 film reveal a trap site location at 4.47 nm relative to the cathode interface. SILCs in the thickness range from 5.1 to 9.6-nm can be explained by the linear increase of the trap sheet charge density on oxide thickness, which suppresses local tunneling currents between cathode interface and trap sites by a reduction of the local oxide electric field.
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U2 - 10.1109/ICSICT.2001.982054
DO - 10.1109/ICSICT.2001.982054
M3 - Conference contribution
AN - SCOPUS:84964413902
T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
SP - 958
EP - 963
BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
A2 - Iwai, Hiroshi
A2 - Qu, Xin-Ping
A2 - Li, Bing-Zong
A2 - Ru, Guo-Ping
A2 - Yu, Paul
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Y2 - 22 October 2001 through 25 October 2001
ER -