TY - GEN
T1 - A prototype high-speed CMOS image sensor with 10,000,000 fps burst-frame rate and 10,000 fps continuous-frame rate
AU - Tochigi, Yasuhisa
AU - Hanzawa, Katsuhiko
AU - Kato, Yuri
AU - Akahane, Nana
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
PY - 2011/2/28
Y1 - 2011/2/28
N2 - In this paper, a high-speed CMOS image sensor having a new architecture and a new operating principle has been developed. The image sensor achieves both the continuous capturing and the burst capturing by a single chip, and has low power consumption, low heat generation, high sensitivity and high S/N ratio. This image sensor consist of mainly four blocks, two dimensional pixel array of 4-transister CMOS active pixel, analog memory arrays connected with each pixel output line independently to the pixel array, scanning circuits and multiple number of output amplifiers. A prototype image sensor was fabricated using a 0.18μm 2-Poly 3-Metal CMOS technology with the die size of 5550 μm H × 4575 μmV, the pixel size of 48 μm H × 48 μmV, the number of pixels of 72 H × 32V, the number of analog memories of 104 memories per pixel and the 6 parallel horizontal output circuits and output amplifiers. The aperture ratio is 35% and the conversion gain is 60 μV/e-(input referred). It has been confirmed that this image sensor achieves 10,000,000 fps during burst capturing mode and 10,000 fps during the continuous capturing mode through the image capture experiments of high speed phenomena such as rotating object and discharge phenomenon.
AB - In this paper, a high-speed CMOS image sensor having a new architecture and a new operating principle has been developed. The image sensor achieves both the continuous capturing and the burst capturing by a single chip, and has low power consumption, low heat generation, high sensitivity and high S/N ratio. This image sensor consist of mainly four blocks, two dimensional pixel array of 4-transister CMOS active pixel, analog memory arrays connected with each pixel output line independently to the pixel array, scanning circuits and multiple number of output amplifiers. A prototype image sensor was fabricated using a 0.18μm 2-Poly 3-Metal CMOS technology with the die size of 5550 μm H × 4575 μmV, the pixel size of 48 μm H × 48 μmV, the number of pixels of 72 H × 32V, the number of analog memories of 104 memories per pixel and the 6 parallel horizontal output circuits and output amplifiers. The aperture ratio is 35% and the conversion gain is 60 μV/e-(input referred). It has been confirmed that this image sensor achieves 10,000,000 fps during burst capturing mode and 10,000 fps during the continuous capturing mode through the image capture experiments of high speed phenomena such as rotating object and discharge phenomenon.
KW - Burst capturing
KW - Continuous capturing
KW - High speed image sensor
UR - http://www.scopus.com/inward/record.url?scp=79951882980&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951882980&partnerID=8YFLogxK
U2 - 10.1117/12.872207
DO - 10.1117/12.872207
M3 - Conference contribution
AN - SCOPUS:79951882980
SN - 9780819484130
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Proceedings of SPIE-IS and T Electronic Imaging - Digital Photography VII
T2 - Digital Photography VII
Y2 - 24 January 2011 through 25 January 2011
ER -