A proposed atomic-layer-deposition of germanium on Si surface

Satoshi Sugahara, Yasutaka Uchida, Takuya Kitamura, Tomonori Nagai, Motohiro Matsuyama, Takeo Hattori, Masakiyo Matsumura

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.

    Original languageEnglish
    Pages (from-to)1609-1613
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume36
    Issue number3 SUPPL. B
    DOIs
    Publication statusPublished - 1997 Mar

    Keywords

    • Atomic hydrogen
    • Atomic layer epitaxy
    • Germanium surface
    • Germanium tetrachloride
    • Precursor chemistry
    • Silicon surface

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Sugahara, S., Uchida, Y., Kitamura, T., Nagai, T., Matsuyama, M., Hattori, T., & Matsumura, M. (1997). A proposed atomic-layer-deposition of germanium on Si surface. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(3 SUPPL. B), 1609-1613. https://doi.org/10.1143/jjap.36.1609