TY - GEN
T1 - A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process
AU - Tamura, Y.
AU - Yoshihara, R.
AU - Kakushima, K.
AU - Ahmet, P.
AU - Kataoka, Y.
AU - Nishiyama, A.
AU - Sugii, N.
AU - Tsutsui, K.
AU - Natori, K.
AU - Hattori, T.
AU - Iwai, H.
PY - 2012
Y1 - 2012
N2 - A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed
AB - A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed
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UR - http://www.scopus.com/inward/citedby.url?scp=84885714473&partnerID=8YFLogxK
U2 - 10.1149/05006.0025ecst
DO - 10.1149/05006.0025ecst
M3 - Conference contribution
AN - SCOPUS:84885714473
SN - 9781607683544
T3 - ECS Transactions
SP - 25
EP - 30
BT - Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
T2 - Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -