A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

Y. Tamura; R. Yoshihara; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/05006.0025ecst

A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

Y. Tamura, R. Yoshihara, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Publisher	Electrochemical Society Inc.
Pages	25-30
Number of pages	6
Edition	6
ISBN (Print)	9781607683544
DOIs	https://doi.org/10.1149/05006.0025ecst
Publication status	Published - 2013
Externally published	Yes
Event	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	6
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

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10.1149/05006.0025ecst

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Tamura, Y., Yoshihara, R., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 25-30). (ECS Transactions; Vol. 50, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/05006.0025ecst

A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. / Tamura, Y.; Yoshihara, R.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. Electrochemical Society Inc., 2013. p. 25-30 (ECS Transactions; Vol. 50, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tamura, Y, Yoshihara, R, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2013, A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, ECS Transactions, no. 6, vol. 50, Electrochemical Society Inc., pp. 25-30, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05006.0025ecst

Tamura Y, Yoshihara R, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A et al. A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 ed. Electrochemical Society Inc. 2013. p. 25-30. (ECS Transactions; 6). https://doi.org/10.1149/05006.0025ecst

Tamura, Y. ; Yoshihara, R. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Tsutsui, K. ; Natori, K. ; Hattori, T. ; Iwai, H. / A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. Electrochemical Society Inc., 2013. pp. 25-30 (ECS Transactions; 6).

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abstract = "A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed",

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AB - A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed

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A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

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