A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

Y. Tamura; R. Yoshihara; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/05006.0025ecst

A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

Y. Tamura, R. Yoshihara, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages	25-30
Number of pages	6
Edition	6
DOIs	https://doi.org/10.1149/05006.0025ecst
Publication status	Published - 2012
Externally published	Yes
Event	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	6
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

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Tamura, Y., Yoshihara, R., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 25-30). (ECS Transactions; Vol. 50, No. 6). https://doi.org/10.1149/05006.0025ecst

A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. / Tamura, Y.; Yoshihara, R.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. 2012. p. 25-30 (ECS Transactions; Vol. 50, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tamura, Y, Yoshihara, R, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2012, A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, ECS Transactions, no. 6, vol. 50, pp. 25-30, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05006.0025ecst

Tamura Y, Yoshihara R, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A et al. A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 ed. 2012. p. 25-30. (ECS Transactions; 6). https://doi.org/10.1149/05006.0025ecst

Tamura, Y. ; Yoshihara, R. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Tsutsui, K. ; Natori, K. ; Hattori, T. ; Iwai, H. / A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process. Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. 2012. pp. 25-30 (ECS Transactions; 6).

@inproceedings{afa3cf6c416f4d8cb51dd7dfa7769a9a,

title = "A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process",

abstract = "A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed",

author = "Y. Tamura and R. Yoshihara and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",

year = "2012",

doi = "10.1149/05006.0025ecst",

language = "English",

isbn = "9781607683544",

series = "ECS Transactions",

number = "6",

pages = "25--30",

booktitle = "Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012",

edition = "6",

note = "Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 ; Conference date: 07-10-2012 Through 12-10-2012",

}

TY - GEN

T1 - A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

AU - Tamura, Y.

AU - Yoshihara, R.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Kataoka, Y.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Tsutsui, K.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2012

Y1 - 2012

N2 - A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed

AB - A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (-Bn) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed

UR - http://www.scopus.com/inward/record.url?scp=84885714473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885714473&partnerID=8YFLogxK

U2 - 10.1149/05006.0025ecst

DO - 10.1149/05006.0025ecst

M3 - Conference contribution

AN - SCOPUS:84885714473

SN - 9781607683544

T3 - ECS Transactions

SP - 25

EP - 30

BT - Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012

T2 - Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012

Y2 - 7 October 2012 through 12 October 2012

ER -

A proposal of schottky barrier height tuning method with interface controlled Ni/Si stacked silicidation process

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