A pixel-shared CMOS image sensor using lateral overflow gate

Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H × 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e - and a high full well capacity of 6.9 × 104-e - in spite of its pixel size of 3.0 × 3.0-μm2.

Original languageEnglish
Title of host publicationESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
Pages240-243
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece
Duration: 2009 Sep 142009 Sep 18

Publication series

NameESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Other

Other35th European Solid-State Circuits Conference, ESSCIRC 2009
CountryGreece
CityAthens
Period09/9/1409/9/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Sakai, S., Tashiro, Y., Akahane, N., Kuroda, R., Mizobuchi, K., & Sugawa, S. (2009). A pixel-shared CMOS image sensor using lateral overflow gate. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference (pp. 240-243). [5326026] (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5326026