A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

H. Mirsandi; T. Yamamoto; Y. Takagi; Y. Okano; Y. Inatomi; Y. Hayakawa; S. Dost

doi:10.1007/s12217-015-9417-1

A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

H. Mirsandi, T. Yamamoto, Y. Takagi, Y. Okano, Y. Inatomi, Y. Hayakawa, S. Dost

ENG - Metallurgy

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In_xGa_1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.

Original language	English
Pages (from-to)	313-320
Number of pages	8
Journal	Microgravity Science and Technology
Volume	27
Issue number	5
DOIs	https://doi.org/10.1007/s12217-015-9417-1
Publication status	Published - 2015 Sep 1

Keywords

Alloys
Growth from solution
Microgravity conditions
Numerical simulation

ASJC Scopus subject areas

Modelling and Simulation
Engineering(all)
Physics and Astronomy(all)
Applied Mathematics

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Mirsandi, H., Yamamoto, T., Takagi, Y., Okano, Y., Inatomi, Y., Hayakawa, Y., & Dost, S. (2015). A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics. Microgravity Science and Technology, 27(5), 313-320. https://doi.org/10.1007/s12217-015-9417-1

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abstract = "InxGa1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.",

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author = "H. Mirsandi and T. Yamamoto and Y. Takagi and Y. Okano and Y. Inatomi and Y. Hayakawa and S. Dost",

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AU - Mirsandi, H.

AU - Yamamoto, T.

AU - Takagi, Y.

AU - Okano, Y.

AU - Inatomi, Y.

AU - Hayakawa, Y.

AU - Dost, S.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - InxGa1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.

AB - InxGa1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.

KW - Alloys

KW - Growth from solution

KW - Microgravity conditions

KW - Numerical simulation

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