A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

H. Mirsandi, T. Yamamoto, Y. Takagi, Y. Okano, Y. Inatomi, Y. Hayakawa, S. Dost

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InxGa1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.

Original languageEnglish
Pages (from-to)313-320
Number of pages8
JournalMicrogravity Science and Technology
Volume27
Issue number5
DOIs
Publication statusPublished - 2015 Sep 1

Keywords

  • Alloys
  • Growth from solution
  • Microgravity conditions
  • Numerical simulation

ASJC Scopus subject areas

  • Modelling and Simulation
  • Engineering(all)
  • Physics and Astronomy(all)
  • Applied Mathematics

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