A novel SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic (SyF) structure in a free layer was demonstrated for both higher immunity to read disturbance and a sufficient margin between the read and write currents. Since magnetization of the free layer becomes stable against thermal fluctuation with increasing thermal-stability factor E/kBT, the SyF free layer of the MTJs realized a magnetic information retention of over 10 years due to its high E/kBT of 67. Furthermore, it was found that the SyF free layer has an advantage of reducing dispersion of write-current density Jc, which is necessary for securing an adequate margin between the read and write currents.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2007 Dec 1|
|Event||2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan|
Duration: 2007 Jun 12 → 2007 Jun 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering