A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion

K. Miura; T. Kawahara; R. Takemura; J. Hayakawa; Shoji Ikeda; R. Sasaki; H. Takahashi; H. Matsuoka; Hideo Ohno

doi:10.1109/VLSIT.2007.4339706

A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion

K. Miura, T. Kawahara, R. Takemura, J. Hayakawa, Shoji Ikeda, R. Sasaki, H. Takahashi, H. Matsuoka, Hideo Ohno

Research output: Contribution to journal › Conference article › peer-review

28 Citations (Scopus)

Abstract

A novel SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic (SyF) structure in a free layer was demonstrated for both higher immunity to read disturbance and a sufficient margin between the read and write currents. Since magnetization of the free layer becomes stable against thermal fluctuation with increasing thermal-stability factor E/k_BT, the SyF free layer of the MTJs realized a magnetic information retention of over 10 years due to its high E/k_BT of 67. Furthermore, it was found that the SyF free layer has an advantage of reducing dispersion of write-current density J_c, which is necessary for securing an adequate margin between the read and write currents.

Original language	English
Article number	4339706
Pages (from-to)	234-235
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339706
Publication status	Published - 2007 Dec 1
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: 2007 Jun 12 → 2007 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/VLSIT.2007.4339706

Cite this

Miura, K., Kawahara, T., Takemura, R., Hayakawa, J., Ikeda, S., Sasaki, R., Takahashi, H., Matsuoka, H., & Ohno, H. (2007). A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion. Digest of Technical Papers - Symposium on VLSI Technology, 234-235. [4339706]. https://doi.org/10.1109/VLSIT.2007.4339706

A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion. / Miura, K.; Kawahara, T.; Takemura, R. et al.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.12.2007, p. 234-235.

Research output: Contribution to journal › Conference article › peer-review

Miura, K, Kawahara, T, Takemura, R, Hayakawa, J, Ikeda, S, Sasaki, R, Takahashi, H, Matsuoka, H & Ohno, H 2007, 'A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion', Digest of Technical Papers - Symposium on VLSI Technology, pp. 234-235. https://doi.org/10.1109/VLSIT.2007.4339706

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abstract = "A novel SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic (SyF) structure in a free layer was demonstrated for both higher immunity to read disturbance and a sufficient margin between the read and write currents. Since magnetization of the free layer becomes stable against thermal fluctuation with increasing thermal-stability factor E/kBT, the SyF free layer of the MTJs realized a magnetic information retention of over 10 years due to its high E/kBT of 67. Furthermore, it was found that the SyF free layer has an advantage of reducing dispersion of write-current density Jc, which is necessary for securing an adequate margin between the read and write currents.",

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AU - Hayakawa, J.

AU - Ikeda, Shoji

AU - Sasaki, R.

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AU - Matsuoka, H.

AU - Ohno, Hideo

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A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion

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