A novel remote reactive sink layer technique for the control of N and O concentrations in metal/high-k gate stacks

Y. Akasaka, K. Shiraishi, N. Umezawa, O. Ogawa, T. Kasuya, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

A novel technique for the control of nitrogen (N) and oxygen (O) concentrations in the metal/high-k gate stacks is proposed. By inserting a reactive metal (Ti) layer remote from work function metal and high-k insulator, N and O concentration is easily decreased. This technique effectively suppresses the EOT increase after high-temperature annealing. Moreover, improved electron mobility and decreased interfacial trap density can be obtained by this technique. We demonstrated MISFET with extremely high electron mobility and thin EOT can be easily obtained even with relaxed process of HfSiON.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages164-165
Number of pages2
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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