A novel patterning method for metal-organic precursors on a SiOx/Si substrate using a local electric field

This paper demonstrates a new technique to form a patterned metal-oxide film on a silicon wafer using a local electric field. The idea of the technique involves using an interaction between metal-organic molecules dissolved in a non-polar solvent and a local electric potential field on a substrate. In this paper, an alkoxide and a metal-organic complex were used as metal-organic precursors. The precursor molecules were selectively deposited at the electrified region of the substrate. The deposited precursor films were heated with an electric furnace to form oxide firms. Patterned TiOx and Sr-Ti oxide films were formed on a SiOx/Si substrate. These patterned thin films are potentially applicable to electric and optical devices. We believe that this new technique provides a new bottom-up process of molecular assembly for nanofabrication.