Abstract
This paper demonstrates a new technique to form a patterned metal-oxide film on a silicon wafer using a local electric field. The idea of the technique involves using an interaction between metal-organic molecules dissolved in a non-polar solvent and a local electric potential field on a substrate. In this paper, an alkoxide and a metal-organic complex were used as metal-organic precursors. The precursor molecules were selectively deposited at the electrified region of the substrate. The deposited precursor films were heated with an electric furnace to form oxide firms. Patterned TiOx and Sr-Ti oxide films were formed on a SiOx/Si substrate. These patterned thin films are potentially applicable to electric and optical devices. We believe that this new technique provides a new bottom-up process of molecular assembly for nanofabrication.
Original language | English |
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Pages (from-to) | 87-92 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 728 |
DOIs | |
Publication status | Published - 2002 |
Event | Functional Nanostructured Materials through Multiscale Assembly and Novel Pattering Techniques - San Francisco, CA, United States Duration: 2002 Apr 2 → 2002 Apr 5 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering