A Novel MOS PROM Using a Highly Resistive Poly-Si Resistor

Masafumi Tanimoto, Junichi Murota, Yasuo Ohmori, Nobuaki Ieda

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A novel MOS electrically programmable read-only memory (PROM) using a highly resistive polycrystalline silicon (poly-Si) resistor as a memory element is proposed. In a highly resistive poly-Si, a new memory effect of an irreversible resistivity transition, from an initial highly resistive value to a low-resistive one, is observed. The dependencies of the transition voltage and current, which cause the transition, on the poly-Si deposition conditions, are studied, and the deposition conditions suitable for MOS PROM fabrication are obtained. The transition voltage Vt can be reduced down to 10 V by decreasing the poly-Si film thickness to 0.4 µm. The transition current is less than 10 mA. A 36-bit MOS PROM, using the poly-Si resistor as a memory element, is fabricated. The programming voltage used in this work is 25 V and the programming time per bit is less than 10 µs. The read access time is less than 300 ns, The programming voltage, however, can be reduced down to 15 V by decreasing the poly-Si film thickness and the series resistance in the circuit. The novel PROM has another advantage in that the poly-Si resistor is compatible with a conventional silicon-gate process.

Original languageEnglish
Pages (from-to)517-520
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume27
Issue number3
DOIs
Publication statusPublished - 1980 Mar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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