A novel method for generating p-type wide- And ultrawide-bandgap III-nitride by doping with magnetic elements

Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Hiroshi Katayama-Yoshida

Research output: Contribution to journalArticlepeer-review

Abstract

We propose a novel method to generate p-type conduction and low resistivity in wide- and ultrawide-bandgap III-nitride semiconductors via doping of a magnetic element. This method is based on the energetic competition between the covalency of the magnetic element and the ligand nitrogen atoms and the exchange-correlation energy of the magnetic impurity. Using magnetic elements with large exchange-correlation energy, we can obtain p-type wide- and ultrawide-bandgap semiconductors, which are basically difficult to synthesize due to the unipolarity.

Original languageEnglish
Article number091007
JournalApplied Physics Express
Volume14
Issue number9
DOIs
Publication statusPublished - 2021 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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