A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications

Xun Gu, Yoshiyuki Kikuchi, Toshihisa Nozawa, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new oxidation reaction at ultralow temperature (-30°C) by bombardment of O2 neutral beam can be enhanced at the extremely low activation energy, which can efficiently form a thin oxide film of all transition metal, such as platinum and ruthenium. Meanwhile, a novel neutral beam enhanced chemical etching for transition metals and magnetic materials was proposed without chemical and physical damages at ultralow temperature through Metallic Complex Reaction process. Highly anisotropic etching profile without both any sidewall re-deposition and damages on magnetic properties could be achieved just with a pure chemical reaction between ethanol and metallic oxide with low kinetic energy by neutral beam for the first time. This new etching technology has been considered as a breakthrough technology to develop next generation MRAM devices.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479933310
DOIs
Publication statusPublished - 2014 Sep 8
Event34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States
Duration: 2014 Jun 92014 Jun 12

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other34th Symposium on VLSI Technology, VLSIT 2014
CountryUnited States
CityHonolulu
Period14/6/914/6/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Gu, X., Kikuchi, Y., Nozawa, T., & Samukawa, S. (2014). A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications. In Digest of Technical Papers - Symposium on VLSI Technology [6894362] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894362