@inproceedings{0950e13c9b4143ae9e6c7868d157c556,
title = "A novel memory test system with an electromagnet for STT-MRAM testing",
abstract = "We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.",
keywords = "auto-prober, electromagnet, memory test system, retention, shmoo plot, STT-MRAM",
author = "R. Tamura and N. Watanabe and H. Koike and H. Sato and S. Ikeda and T. Endoh and S. Sato",
year = "2019",
month = oct,
doi = "10.1109/NVMTS47818.2019.8986200",
language = "English",
series = "NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019",
note = "19th Non-Volatile Memory Technology Symposium, NVMTS 2019 ; Conference date: 28-10-2019 Through 30-10-2019",
}