A novel memory test system with an electromagnet for STT-MRAM testing

R. Tamura, N. Watanabe, H. Koike, H. Sato, S. Ikeda, T. Endoh, S. Sato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.

Original languageEnglish
Title of host publicationNVMTS 2019 - Non-Volatile Memory Technology Symposium 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728144313
DOIs
Publication statusPublished - 2019 Oct
Event19th Non-Volatile Memory Technology Symposium, NVMTS 2019 - Durham, United States
Duration: 2019 Oct 282019 Oct 30

Publication series

NameNVMTS 2019 - Non-Volatile Memory Technology Symposium 2019

Conference

Conference19th Non-Volatile Memory Technology Symposium, NVMTS 2019
CountryUnited States
CityDurham
Period19/10/2819/10/30

Keywords

  • auto-prober
  • electromagnet
  • memory test system
  • retention
  • shmoo plot
  • STT-MRAM

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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