TY - GEN
T1 - A novel memory test system with an electromagnet for STT-MRAM testing
AU - Tamura, R.
AU - Watanabe, N.
AU - Koike, H.
AU - Sato, Hideo
AU - Ikeda, S.
AU - Endoh, T.
AU - Sato, S.
N1 - Funding Information:
ACKNOWLEDGMENTS This work was in part supported by STT-MRAM R&D program under Industry-Academic collaboration of CIES consortium and JST-OPERA (Program Grant Number JPMJOP1611). The authors thank M. Takahashi from Tokyo Seimitsu co., ltd and H. Kiyofuji from Micronics JAPAN co., ltd.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.
AB - We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.
KW - STT-MRAM
KW - auto-prober
KW - electromagnet
KW - memory test system
KW - retention
KW - shmoo plot
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U2 - 10.1109/NVMTS47818.2019.8986200
DO - 10.1109/NVMTS47818.2019.8986200
M3 - Conference contribution
AN - SCOPUS:85081115507
T3 - NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019
BT - NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th Non-Volatile Memory Technology Symposium, NVMTS 2019
Y2 - 28 October 2019 through 30 October 2019
ER -