TY - GEN
T1 - A novel material for laser diodes of optical fiber communication
AU - Wang, Fang
AU - Zhang, Wei
AU - Liu, Yu Huai
AU - Yang, Shou Yi
AU - Zhang, Yuan Tao
AU - Ryuji, Katayama
AU - Matsuoka, Takashi
PY - 2013
Y1 - 2013
N2 - The conventional material for the optical fiber communication laser diode is based on InGaAsP, which might be substituted by a potential candidate, InGaAlN. The new active region material, InN, is introduced regarding to its crystal growth and characterization, including the structural, optical and electrical properties. This material is promising for providing good performance of temperature stability of the wavelength. In addition, it is environmentally friendly.
AB - The conventional material for the optical fiber communication laser diode is based on InGaAsP, which might be substituted by a potential candidate, InGaAlN. The new active region material, InN, is introduced regarding to its crystal growth and characterization, including the structural, optical and electrical properties. This material is promising for providing good performance of temperature stability of the wavelength. In addition, it is environmentally friendly.
KW - InGaAlN
KW - InN
KW - Laser diode
KW - Pressurized reactor
UR - http://www.scopus.com/inward/record.url?scp=84886497798&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886497798&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.760-762.45
DO - 10.4028/www.scientific.net/AMR.760-762.45
M3 - Conference contribution
AN - SCOPUS:84886497798
SN - 9783037857731
T3 - Advanced Materials Research
SP - 45
EP - 49
BT - Optoelectronics Engineering and Information Technologies in Industry
T2 - 2nd International Conference on Opto-Electronics Engineering and Materials Research, OEMR 2013
Y2 - 19 October 2013 through 20 October 2013
ER -