A novel IR monitoring system for organic contaminants on 300-mm silicon wafer surfaces

H. Yoshida, M. Endo, Y. Maeda, M. Niwano, N. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new infrared (IR) monitoring system has been developed for the detection of organic contaminants on 300 mm silicon wafer surfaces with non-contact, non-destructive, high sensitivity, and real-Time capability. IR propagates through the wafer in which the light is internally reflected about 600 times. This enables us to detect an organic contamination on the wafer surface with a sensitivity of below 1×1011 carbon atoms/cm2. We demonstrate its performance by monitoring the decomposing process of dioctyl-phthalate (DOP) on the wafer surface by ultraviolet (UV)/ozone cleaning.

Original languageEnglish
Title of host publication1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages457-460
Number of pages4
ISBN (Electronic)0780354036, 9780780354036
DOIs
Publication statusPublished - 1999
Event1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Santa Clara, United States
Duration: 1999 Oct 111999 Oct 13

Publication series

Name1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings

Other

Other1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999
CountryUnited States
CitySanta Clara
Period99/10/1199/10/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Process Chemistry and Technology
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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