A novel delayed flip-flop circuit using resonant tunneling logic gates

Koichi Maezawa, Hideaki Matsuzaki, Tomoyuki Akeyoshi, Jiro Osaka, Masafumi Yamamoto, Taiichi Otsuji

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel delayed flip-flop circuit using monostable-bistable transition logic elements (MOBILEs) was proposed, and was fabricated using resonant-tunneling-diode/high-electron-mobility-transistor integration technology on an InP substrate. Error free operations at up to 12.5 Gb/s were demonstrated at room temperature.

Original languageEnglish
Pages (from-to)L212-L213
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number2 SUPPL. B
DOIs
Publication statusPublished - 1998 Feb 15
Externally publishedYes

Keywords

  • Delayed flip-flop
  • HEMT
  • InAlAs
  • InGaAs
  • InP
  • Resonant tunneling diode

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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