A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2)

X. Gu; A. Teramoto; R. Kuroda; Y. Tomita; T. Nemoto; S. Kuroki; S. Sugawa; T. Ohmi

doi:10.1109/VLSIT.2012.6242490

A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2)

X. Gu, A. Teramoto, R. Kuroda, Y. Tomita, T. Nemoto, S. Kuroki, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical nitrogen plasma treatment (NPT) was employed to minimize chemically damage introduction to fluorocarbon in post-etching cleaning and CMP processes. Also, a new structure with a delamination- protective-liner (DPL), instead of barrier-metal, between Cu and fluorocarbon is introduced to avoid thermally induced electrical degradation and to reduce the interconnect delay significantly (by >30% in 32 nm-node). Non-porous ULK fluorocarbon with NPT and DPL technologies is a promising candidate for high performance Cu interconnects.

Original language	English
Title of host publication	2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages	119-120
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2012.6242490
Publication status	Published - 2012
Event	2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States Duration: 2012 Jun 12 → 2012 Jun 14

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2012 Symposium on VLSI Technology, VLSIT 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/6/12 → 12/6/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2012.6242490

Cite this

Gu, X., Teramoto, A., Kuroda, R., Tomita, Y., Nemoto, T., Kuroki, S., Sugawa, S., & Ohmi, T. (2012). A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2). In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 119-120). [6242490] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242490

A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2). / Gu, X.; Teramoto, A.; Kuroda, R.; Tomita, Y.; Nemoto, T.; Kuroki, S.; Sugawa, S.; Ohmi, T.

2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 119-120 6242490 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gu, X, Teramoto, A, Kuroda, R, Tomita, Y, Nemoto, T, Kuroki, S, Sugawa, S & Ohmi, T 2012, A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2). in 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers., 6242490, Digest of Technical Papers - Symposium on VLSI Technology, pp. 119-120, 2012 Symposium on VLSI Technology, VLSIT 2012, Honolulu, HI, United States, 12/6/12. https://doi.org/10.1109/VLSIT.2012.6242490

Gu X, Teramoto A, Kuroda R, Tomita Y, Nemoto T, Kuroki S et al. A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2). In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 119-120. 6242490. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242490

Gu, X. ; Teramoto, A. ; Kuroda, R. ; Tomita, Y. ; Nemoto, T. ; Kuroki, S. ; Sugawa, S. ; Ohmi, T. / A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2). 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. pp. 119-120 (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical nitrogen plasma treatment (NPT) was employed to minimize chemically damage introduction to fluorocarbon in post-etching cleaning and CMP processes. Also, a new structure with a delamination- protective-liner (DPL), instead of barrier-metal, between Cu and fluorocarbon is introduced to avoid thermally induced electrical degradation and to reduce the interconnect delay significantly (by >30% in 32 nm-node). Non-porous ULK fluorocarbon with NPT and DPL technologies is a promising candidate for high performance Cu interconnects.",

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AU - Kuroki, S.

AU - Sugawa, S.

AU - Ohmi, T.

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AB - A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical nitrogen plasma treatment (NPT) was employed to minimize chemically damage introduction to fluorocarbon in post-etching cleaning and CMP processes. Also, a new structure with a delamination- protective-liner (DPL), instead of barrier-metal, between Cu and fluorocarbon is introduced to avoid thermally induced electrical degradation and to reduce the interconnect delay significantly (by >30% in 32 nm-node). Non-porous ULK fluorocarbon with NPT and DPL technologies is a promising candidate for high performance Cu interconnects.

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A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2)

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