A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2)

X. Gu, A. Teramoto, R. Kuroda, Y. Tomita, T. Nemoto, S. Kuroki, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical nitrogen plasma treatment (NPT) was employed to minimize chemically damage introduction to fluorocarbon in post-etching cleaning and CMP processes. Also, a new structure with a delamination- protective-liner (DPL), instead of barrier-metal, between Cu and fluorocarbon is introduced to avoid thermally induced electrical degradation and to reduce the interconnect delay significantly (by >30% in 32 nm-node). Non-porous ULK fluorocarbon with NPT and DPL technologies is a promising candidate for high performance Cu interconnects.

Original languageEnglish
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages119-120
Number of pages2
DOIs
Publication statusPublished - 2012
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: 2012 Jun 122012 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2012 Symposium on VLSI Technology, VLSIT 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1212/6/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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