A novel characterization method to monitor process damage for transistors

Soichiro Kitazaki; Yoshinori Kumura; Susumu Shuto; Tohru Ozaki; Takeshi Hamamoto; Akihiro Nitayama

doi:10.1109/RELPHY.2008.4559005

A novel characterization method to monitor process damage for transistors

Soichiro Kitazaki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Takeshi Hamamoto, Akihiro Nitayama

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The most appropriate method to evaluate the process damage is proposed. FeRAM process is used as a damage source. The degradation of the drain current of long-channel MOSFET is larger than that of short-channel MOSFET, although long-channel MOSFET has been believed to be more robust. In the case of short-channel MOSFET, the drain current is limited by saturation velocity, and thus the mobility degradation caused by the process damage has a smaller influence. On the contrary, in the case of long-channel MOSFET, the drain current is not limited by saturation velocity, which leads to the degradation of the drain current owing to the mobility reduction caused by the process damage of the FeRAM capacitor process. These results suggest that the most accurate method for evaluating the process damage is to monitor the degradation of the drain current of long-channel MOSFET.

Original language	English
Title of host publication	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages	719-720
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2008.4559005
Publication status	Published - 2008 Sept 17
Event	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: 2008 Apr 27 → 2008 May 1

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country/Territory	United States
City	Phoenix, AZ
Period	08/4/27 → 08/5/1

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2008.4559005

Cite this

Kitazaki, S., Kumura, Y., Shuto, S., Ozaki, T., Hamamoto, T., & Nitayama, A. (2008). A novel characterization method to monitor process damage for transistors. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 719-720). [4559005] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4559005

A novel characterization method to monitor process damage for transistors. / Kitazaki, Soichiro; Kumura, Yoshinori; Shuto, Susumu et al.

46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 719-720 4559005 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kitazaki, S, Kumura, Y, Shuto, S, Ozaki, T, Hamamoto, T & Nitayama, A 2008, A novel characterization method to monitor process damage for transistors. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS., 4559005, IEEE International Reliability Physics Symposium Proceedings, pp. 719-720, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 08/4/27. https://doi.org/10.1109/RELPHY.2008.4559005

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abstract = "The most appropriate method to evaluate the process damage is proposed. FeRAM process is used as a damage source. The degradation of the drain current of long-channel MOSFET is larger than that of short-channel MOSFET, although long-channel MOSFET has been believed to be more robust. In the case of short-channel MOSFET, the drain current is limited by saturation velocity, and thus the mobility degradation caused by the process damage has a smaller influence. On the contrary, in the case of long-channel MOSFET, the drain current is not limited by saturation velocity, which leads to the degradation of the drain current owing to the mobility reduction caused by the process damage of the FeRAM capacitor process. These results suggest that the most accurate method for evaluating the process damage is to monitor the degradation of the drain current of long-channel MOSFET.",

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N2 - The most appropriate method to evaluate the process damage is proposed. FeRAM process is used as a damage source. The degradation of the drain current of long-channel MOSFET is larger than that of short-channel MOSFET, although long-channel MOSFET has been believed to be more robust. In the case of short-channel MOSFET, the drain current is limited by saturation velocity, and thus the mobility degradation caused by the process damage has a smaller influence. On the contrary, in the case of long-channel MOSFET, the drain current is not limited by saturation velocity, which leads to the degradation of the drain current owing to the mobility reduction caused by the process damage of the FeRAM capacitor process. These results suggest that the most accurate method for evaluating the process damage is to monitor the degradation of the drain current of long-channel MOSFET.

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A novel characterization method to monitor process damage for transistors

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