A novel characterization method to monitor process damage for transistors

Soichiro Kitazaki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Takeshi Hamamoto, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The most appropriate method to evaluate the process damage is proposed. FeRAM process is used as a damage source. The degradation of the drain current of long-channel MOSFET is larger than that of short-channel MOSFET, although long-channel MOSFET has been believed to be more robust. In the case of short-channel MOSFET, the drain current is limited by saturation velocity, and thus the mobility degradation caused by the process damage has a smaller influence. On the contrary, in the case of long-channel MOSFET, the drain current is not limited by saturation velocity, which leads to the degradation of the drain current owing to the mobility reduction caused by the process damage of the FeRAM capacitor process. These results suggest that the most accurate method for evaluating the process damage is to monitor the degradation of the drain current of long-channel MOSFET.

Original languageEnglish
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages719-720
Number of pages2
DOIs
Publication statusPublished - 2008 Sep 17
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: 2008 Apr 272008 May 1

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period08/4/2708/5/1

ASJC Scopus subject areas

  • Engineering(all)

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