This paper describes a new write/erase method for Flash memory to improve the read disturb characteristics by means of drastically reducing the stress leakage current in the tunnel oxide. This new write/erase operation method is based on the newly discovered three decay characteristics of the stress leakage current. The features of the proposed write/erase method are as follows: 1) the polarity of the additional pulse after applying write/erase pulse is the same as that of the control gate voltage in the read operation; 2) the voltage of the additional pulse is higher than that of a control gate in a read operation, and lower than that of a control gate in a write operation; and 3) an additional pulse is applied to the control gate just after a completion of the write/erase operation. With the proposed write/erase method, the degradation of the read disturb life time after 106 write/erase cycles can be drastically reduced by 50% in comparison with the conventional bipolarity write/erase method used for NAND-type Flash memory. Furthermore, the degradation can be drastically reduced by 90% in comparison with the conventional unipolarity write/erase method for NOR-, AND-, and DINOR-type Flash memory. This proposed write/erase operation method has superior potential for applications to 256 Mb Flash memories and beyond.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering