A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications

H. Matsuoka; T. Mine; K. Nakazato; M. Moniwa; Y. Takahashi; M. Matsuoka; H. Chakihara; A. Fujimoto; K. Okuyama

doi:10.1109/vlsit.2004.1345498

A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications

H. Matsuoka, T. Mine, K. Nakazato, M. Moniwa, Y. Takahashi, M. Matsuoka, H. Chakihara, A. Fujimoto, K. Okuyama

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	234-235
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/vlsit.2004.1345498
Publication status	Published - 2004
Event	2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States Duration: 2004 Jun 15 → 2004 Jun 17

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/vlsit.2004.1345498

Cite this

@article{1f250059934646c88bd4a6027f87a4b6,

title = "A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications",

author = "H. Matsuoka and T. Mine and K. Nakazato and M. Moniwa and Y. Takahashi and M. Matsuoka and H. Chakihara and A. Fujimoto and K. Okuyama",

year = "2004",

doi = "10.1109/vlsit.2004.1345498",

language = "English",

pages = "234--235",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Symposium on VLSI Technology - Digest of Technical Papers ; Conference date: 15-06-2004 Through 17-06-2004",

}

TY - JOUR

T1 - A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications

AU - Matsuoka, H.

AU - Mine, T.

AU - Nakazato, K.

AU - Moniwa, M.

AU - Takahashi, Y.

AU - Matsuoka, M.

AU - Chakihara, H.

AU - Fujimoto, A.

AU - Okuyama, K.

PY - 2004

Y1 - 2004

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U2 - 10.1109/vlsit.2004.1345498

DO - 10.1109/vlsit.2004.1345498

M3 - Conference article

AN - SCOPUS:4544286704

SP - 234

EP - 235

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - 2004 Symposium on VLSI Technology - Digest of Technical Papers

Y2 - 15 June 2004 through 17 June 2004

ER -

A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications

ASJC Scopus subject areas

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