A new vertically stacked poly-Si MOSFET with partially depleted SOI operation for densely integrated SoC applications

H. Matsuoka, T. Mine, K. Nakazato, M. Moniwa, Y. Takahashi, M. Matsuoka, H. Chakihara, A. Fujimoto, K. Okuyama

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)234-235
    Number of pages2
    JournalDigest of Technical Papers - Symposium on VLSI Technology
    DOIs
    Publication statusPublished - 2004
    Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
    Duration: 2004 Jun 152004 Jun 17

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this