Abstract
The asymmetric characteristics of the conventional vertical MOSFET are examined. To reduce the IR drop influences of the diffusion resistance for the vertical MOSFET, a new vertical MOSFET for the Vertical Logic Circuit (VLC) configuration, which separates the current paths of small currents from large currents, has been proposed.
Original language | English |
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Pages (from-to) | 1457-1462 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 54 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 Nov 1 |
Keywords
- Asymmetric characteristics
- Back-bias effect
- MOSFET
- Pillar
- Vertical
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry