A new vertical MOSFET "Vertical Logic Circuit (VLC) MOSFET" suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit

Koji Sakui, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The asymmetric characteristics of the conventional vertical MOSFET are examined. To reduce the IR drop influences of the diffusion resistance for the vertical MOSFET, a new vertical MOSFET for the Vertical Logic Circuit (VLC) configuration, which separates the current paths of small currents from large currents, has been proposed.

Original languageEnglish
Pages (from-to)1457-1462
Number of pages6
JournalSolid-State Electronics
Volume54
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

Keywords

  • Asymmetric characteristics
  • Back-bias effect
  • MOSFET
  • Pillar
  • Vertical

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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