A new type of stacking fault in β-SiC

Naoto Shirahata, Kazunori Kijima, Xiuliang Ma, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    A new type of stacking fault was found in ultrapure and ultrafine β-SiC in images obtained by high-resolution transmission electron microscopy (HR-TEM). The β-SiC particles were prepared by the plasma chemical vapor deposition (plasma-CVD) method and quenched rapidly from the gas phase. This type of stacking fault disappeared in the specimen heated at 1850°C for 10 min in Ar atmosphere. The proposed stacking fault was examined from the viewpoints of energy and synthetic condition.

    Original languageEnglish
    Pages (from-to)505-508
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number2 A
    Publication statusPublished - 2001 Feb


    • General stacking fault
    • Heat treatment
    • High-resolution transmission electron microscopy
    • Plasma-CVD
    • Unstable stacking fault
    • β-SiC

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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