A new type of stacking fault in β-SiC

Naoto Shirahata, Kazunori Kijima, Xiuliang Ma, Yuichi Ikuhara

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A new type of stacking fault was found in ultrapure and ultrafine β-SiC in images obtained by high-resolution transmission electron microscopy (HR-TEM). The β-SiC particles were prepared by the plasma chemical vapor deposition (plasma-CVD) method and quenched rapidly from the gas phase. This type of stacking fault disappeared in the specimen heated at 1850°C for 10 min in Ar atmosphere. The proposed stacking fault was examined from the viewpoints of energy and synthetic condition.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2 A
Publication statusPublished - 2001 Feb
Externally publishedYes


  • General stacking fault
  • Heat treatment
  • High-resolution transmission electron microscopy
  • Plasma-CVD
  • Unstable stacking fault
  • β-SiC

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'A new type of stacking fault in β-SiC'. Together they form a unique fingerprint.

Cite this