A new type of quantized Hall effect in layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3

M. Sasaki, N. Miyajima, H. Negishi, M. Inoue, V. A. Kulbachinskii, K. Suga, Y. Narumi, K. Kindo

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6 Citations (Scopus)

Abstract

We have measured magnetotransports for layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3 at low temperature in magnetic fields up to 55 T. Both crystals show clear Hall plateaus near the corresponding resistivity minima. Based on the existing band model, we propose a possible mechanism for Hall oscillation in these three-dimensional systems, in which Sn-originated resonant impurity band or lower valence band plays a crucial role.

Original languageEnglish
Pages (from-to)510-514
Number of pages5
JournalPhysica B: Condensed Matter
Volume298
Issue number1-4
DOIs
Publication statusPublished - 2001 Apr 1

Keywords

  • Layered semiconductor
  • Quantized Hall effect
  • Sn-originated impurity band

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Sasaki, M., Miyajima, N., Negishi, H., Inoue, M., Kulbachinskii, V. A., Suga, K., Narumi, Y., & Kindo, K. (2001). A new type of quantized Hall effect in layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3. Physica B: Condensed Matter, 298(1-4), 510-514. https://doi.org/10.1016/S0921-4526(01)00373-8