A new temporary bonding technology with spin-on glass and hydrogenated amorphous Si for 3D LSIs

H. Hashiguchi, T. Fukushima, H. Kino, K. W. Lee, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes. A XeCl excimer laser was irradiated to the a-Si:H layer through the glass wafers for debonding the chips. A novel via-last/backside-via 3D integration process using temporary SOG bonding was also proposed for advanced multichip-to-wafer 3D integration with self-assembly.

Original languageEnglish
Title of host publication2014 International Conference on Electronics Packaging, ICEP 2014
PublisherIEEE Computer Society
Pages74-77
Number of pages4
ISBN (Print)9784904090107
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 International Conference on Electronics Packaging, ICEP 2014 - Toyama, Japan
Duration: 2014 Apr 232014 Apr 25

Publication series

Name2014 International Conference on Electronics Packaging, ICEP 2014

Conference

Conference2014 International Conference on Electronics Packaging, ICEP 2014
CountryJapan
CityToyama
Period14/4/2314/4/25

Keywords

  • 3D integration
  • Chip on wafer
  • Temporary bonding/de-bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'A new temporary bonding technology with spin-on glass and hydrogenated amorphous Si for 3D LSIs'. Together they form a unique fingerprint.

Cite this