Abstract
A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.
Original language | English |
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Article number | 064002 |
Journal | Journal of Semiconductors |
Volume | 31 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 |
Externally published | Yes |
Keywords
- GaN HEMT
- asymmetrical structure
- parameter extraction
- small-signal model
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry