A new small-signal model for asymmetrical AlGaN/GaN HEMTs

Teng Ma; Yue Hao; Chi Chen; Xiaohua Ma

doi:10.1088/1674-4926/31/6/064002

A new small-signal model for asymmetrical AlGaN/GaN HEMTs

Teng Ma, Yue Hao, Chi Chen, Xiaohua Ma

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.

Original language	English
Article number	064002
Journal	Journal of Semiconductors
Volume	31
Issue number	6
DOIs	https://doi.org/10.1088/1674-4926/31/6/064002
Publication status	Published - 2010
Externally published	Yes

Keywords

GaN HEMT
asymmetrical structure
parameter extraction
small-signal model

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.",

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AU - Ma, Teng

AU - Hao, Yue

AU - Chen, Chi

AU - Ma, Xiaohua

PY - 2010

Y1 - 2010

N2 - A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.

AB - A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.

KW - GaN HEMT

KW - asymmetrical structure

KW - parameter extraction

KW - small-signal model

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