A new small-signal model for asymmetrical AlGaN/GaN HEMTs

Teng Ma, Yue Hao, Chi Chen, Xiaohua Ma

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.

Original languageEnglish
Article number064002
JournalJournal of Semiconductors
Issue number6
Publication statusPublished - 2010
Externally publishedYes


  • GaN HEMT
  • asymmetrical structure
  • parameter extraction
  • small-signal model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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