A New Silicone-Based Negative Resist (SNR) for Two-Layer Resist System

Masao Morita; Saburo Imamura; Akinobu Tanaka; Toshiaki Tamamura

doi:10.1149/1.2115266

A New Silicone-Based Negative Resist (SNR) for Two-Layer Resist System

Masao Morita, Saburo Imamura, Akinobu Tanaka, Toshiaki Tamamura

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A new silicone-based negative resist (SNR) for a two-layer resist system was synthesized by the chloromethylation of oligomeric diphenyl siloxane (ODPS), in which the polymerization of ODPS occurred simultaneously. The molecular weight of SNR could be controlled by the reaction conditions. SNR showed excellent dry etching resistance to O₂ RIE owing to the siloxane main chain structure and high sensitivity and high resolution to electron beam, x-ray, and deep UV radiation due to chloromethyl groups as the crosslinking units. The high glass transition temperature of SNR (150°C) due to diphenyl structure contributes to improving resolution and eliminates lithographic problems involved in low T_g conventional silicone resins. Submicron patterns with a high aspect ratio were fabricated in a two-layer system comprised of SNR on AZ1350 photoresist bottom layer.

Original language	English
Pages (from-to)	2402-2406
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	131
Issue number	10
DOIs	https://doi.org/10.1149/1.2115266
Publication status	Published - 1984 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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@article{4ecbe5d07cde4418a9474f293d1aba16,

title = "A New Silicone-Based Negative Resist (SNR) for Two-Layer Resist System",

abstract = "A new silicone-based negative resist (SNR) for a two-layer resist system was synthesized by the chloromethylation of oligomeric diphenyl siloxane (ODPS), in which the polymerization of ODPS occurred simultaneously. The molecular weight of SNR could be controlled by the reaction conditions. SNR showed excellent dry etching resistance to O2 RIE owing to the siloxane main chain structure and high sensitivity and high resolution to electron beam, x-ray, and deep UV radiation due to chloromethyl groups as the crosslinking units. The high glass transition temperature of SNR (150°C) due to diphenyl structure contributes to improving resolution and eliminates lithographic problems involved in low Tg conventional silicone resins. Submicron patterns with a high aspect ratio were fabricated in a two-layer system comprised of SNR on AZ1350 photoresist bottom layer.",

author = "Masao Morita and Saburo Imamura and Akinobu Tanaka and Toshiaki Tamamura",

year = "1984",

month = oct,

doi = "10.1149/1.2115266",

language = "English",

volume = "131",

pages = "2402--2406",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - A New Silicone-Based Negative Resist (SNR) for Two-Layer Resist System

AU - Morita, Masao

AU - Imamura, Saburo

AU - Tanaka, Akinobu

AU - Tamamura, Toshiaki

PY - 1984/10

Y1 - 1984/10

N2 - A new silicone-based negative resist (SNR) for a two-layer resist system was synthesized by the chloromethylation of oligomeric diphenyl siloxane (ODPS), in which the polymerization of ODPS occurred simultaneously. The molecular weight of SNR could be controlled by the reaction conditions. SNR showed excellent dry etching resistance to O2 RIE owing to the siloxane main chain structure and high sensitivity and high resolution to electron beam, x-ray, and deep UV radiation due to chloromethyl groups as the crosslinking units. The high glass transition temperature of SNR (150°C) due to diphenyl structure contributes to improving resolution and eliminates lithographic problems involved in low Tg conventional silicone resins. Submicron patterns with a high aspect ratio were fabricated in a two-layer system comprised of SNR on AZ1350 photoresist bottom layer.

AB - A new silicone-based negative resist (SNR) for a two-layer resist system was synthesized by the chloromethylation of oligomeric diphenyl siloxane (ODPS), in which the polymerization of ODPS occurred simultaneously. The molecular weight of SNR could be controlled by the reaction conditions. SNR showed excellent dry etching resistance to O2 RIE owing to the siloxane main chain structure and high sensitivity and high resolution to electron beam, x-ray, and deep UV radiation due to chloromethyl groups as the crosslinking units. The high glass transition temperature of SNR (150°C) due to diphenyl structure contributes to improving resolution and eliminates lithographic problems involved in low Tg conventional silicone resins. Submicron patterns with a high aspect ratio were fabricated in a two-layer system comprised of SNR on AZ1350 photoresist bottom layer.

UR - http://www.scopus.com/inward/record.url?scp=0021515777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021515777&partnerID=8YFLogxK

U2 - 10.1149/1.2115266

DO - 10.1149/1.2115266

M3 - Article

AN - SCOPUS:0021515777

VL - 131

SP - 2402

EP - 2406

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -

A New Silicone-Based Negative Resist (SNR) for Two-Layer Resist System

Abstract

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