A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

Yaguang Guo, Qian Wang, Yoshiyuki Kawazoe, Puru Jena

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (∼10 4 cm/V · s) at room temperature and a low mass density (1.71 g/cm 3), making it a promising material for optoelectronic applications.

Original languageEnglish
Article number14342
JournalScientific reports
Volume5
DOIs
Publication statusPublished - 2015 Sep 23

ASJC Scopus subject areas

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