A new sensing scheme with high signal margin suitable for Spin-Transfer Torque RAM

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Spin-Transfer Torque RAM (STT-RAM)[1] using Tunnel Magneto-Resistance (TMR) devices[2] is one of the most promising universal memory implementation because of its high write endurance, low voltage operation and good process-scalability compared to previous nonvolatile memory implementation[35]. From a viewpoint of signal sensing circuitry, STT-RAM is very different from conventional RAM, e.g. DRAM, SRAM. In order to achieve high density, high speed and low power required as a universal memory implementation, it is a key issue to develop a sensing scheme that amplifies the read signal from a memory cell at high efficiency. This paper proposes a new sensing scheme with high signal margin, based on a detailed analysis of STT-RAM read operation.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages56-57
Number of pages2
DOIs
Publication statusPublished - 2011 Jul 11
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: 2011 Apr 252011 Apr 27

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period11/4/2511/4/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Koike, H., & Endoh, T. (2011). A new sensing scheme with high signal margin suitable for Spin-Transfer Torque RAM. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 56-57). [5872230] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872230