A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Tetsuya Suemitsu, Kengo Kobayashi, Shinya Hatakeyama, Nana Yasukawa, Tomohiro Yoshida, Taiichi Otsuji, Daniel Piedra, Tomás Palacios

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

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Engineering & Materials Science

Physics & Astronomy